HFD2N60U Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HFD2N60U
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 38 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: D-PAK
Аналог (замена) для HFD2N60U
HFD2N60U Datasheet (PDF)
hfd2n60u hfu2n60u.pdf

June 2015BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (T
hfd2n60u.pdf

Jan 2014BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty
hfd2n60s.pdf

March 2014BVDSS = 600 VRDS(on) typ HFD2N60S / HFU2N60SID = 1.9 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60S HFU2N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC
hfd2n60.pdf

July 2005BVDSS = 600 VRDS(on) typ HFD2N60 / HFU2N60ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60 HFU2N60 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ
Другие MOSFET... HFA9N90 , HFB1N60S , HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , 7N60 , HFD2N65S , HFD2N65U , HFD2N70S , HFD2N90 , HFD3N80 , HFD4N50 , HFD5N40 , HFD5N50S .
History: JCS6AN70V | PNMDP600V1 | IXTP3N90A | MP10N60EIF | NCE65NF099T | 2SK1463
History: JCS6AN70V | PNMDP600V1 | IXTP3N90A | MP10N60EIF | NCE65NF099T | 2SK1463



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