HFD5N60S Specs and Replacement

Type Designator: HFD5N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 91 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: D-PAK

HFD5N60S substitution

- MOSFET ⓘ Cross-Reference Search

 

HFD5N60S datasheet

 ..1. Size:205K  semihow
 hfd5n60s.pdf pdf_icon

HFD5N60S

Sep 2009 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ... See More ⇒

 ..2. Size:324K  semihow
 hfd5n60s hfu5n60s.pdf pdf_icon

HFD5N60S

June 2015 BVDSS = 600 V RDS(on) typ HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC... See More ⇒

 7.1. Size:210K  semihow
 hfd5n60u.pdf pdf_icon

HFD5N60S

Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC ... See More ⇒

 7.2. Size:357K  semihow
 hfd5n60u hfu5n60u.pdf pdf_icon

HFD5N60S

June 2015 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC... See More ⇒

SHOW MORE

Detailed specifications: HFD2N65U, HFD2N70S, HFD2N90, HFD3N80, HFD4N50, HFD5N40, HFD5N50S, HFD5N50U, 75N75, HFD5N60U, HFD5N65S, HFD5N65U, HFD5N70S, HFD5N70U, HFD630, HFD6N60U, HFD6N65U

Keywords - HFD5N60S MOSFET specs

 HFD5N60S cross reference

 HFD5N60S equivalent finder

 HFD5N60S pdf lookup

 HFD5N60S substitution

 HFD5N60S replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs