HFD5N60S. Аналоги и основные параметры

Наименование производителя: HFD5N60S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 91 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm

Тип корпуса: D-PAK

Аналог (замена) для HFD5N60S

- подборⓘ MOSFET транзистора по параметрам

 

HFD5N60S даташит

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 hfd5n60s.pdf pdf_icon

HFD5N60S

Sep 2009 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ

 ..2. Size:324K  semihow
 hfd5n60s hfu5n60s.pdf pdf_icon

HFD5N60S

June 2015 BVDSS = 600 V RDS(on) typ HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC

 7.1. Size:210K  semihow
 hfd5n60u.pdf pdf_icon

HFD5N60S

Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC

 7.2. Size:357K  semihow
 hfd5n60u hfu5n60u.pdf pdf_icon

HFD5N60S

June 2015 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HFD2N65U, HFD2N70S, HFD2N90, HFD3N80, HFD4N50, HFD5N40, HFD5N50S, HFD5N50U, 75N75, HFD5N60U, HFD5N65S, HFD5N65U, HFD5N70S, HFD5N70U, HFD630, HFD6N60U, HFD6N65U