All MOSFET. HFH7N80 Datasheet

 

HFH7N80 Datasheet and Replacement


   Type Designator: HFH7N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-3P
 

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HFH7N80 Datasheet (PDF)

 ..1. Size:253K  semihow
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HFH7N80

Mar 2010BVDSS = 800 VRDS(on) typ = 1.55 HFH7N80ID = 7.0 A800V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Unrivalled Gate Charge : 35 nC (Typ ) Exte

 9.1. Size:616K  shantou-huashan
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HFH7N80

Shantou Huashan Electronic Devices Co.,Ltd. HFH7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

Datasheet: HFD8N65U , HFD8N70U , HFH10N80 , HFH11N90 , HFH13N80 , HFH18N50S , HFH19N60 , HFH6N90 , AO4468 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S , HFP10N60U , HFP10N65S , HFP10N65U , HFP10N80 .

History: BSC190N12NS3G | SM6011NSF | IXTT10N100D2 | IXFT30N40Q | PHD18NQ10T | H02N60SI | FDS6688AS

Keywords - HFH7N80 MOSFET datasheet

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