All MOSFET. HFI640 Datasheet

 

HFI640 Datasheet and Replacement


   Type Designator: HFI640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-262
 

 HFI640 substitution

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HFI640 Datasheet (PDF)

 ..1. Size:191K  semihow
 hfi640 hfw640.pdf pdf_icon

HFI640

Mar 2008BVDSS = 200 VRDS(on) typ HFW640 / HFI640ID = 18 A200V N-Channel MOSFETD2-PAK I2-PAK2FEATURES13 123 Originative New DesignHFW640 HFI640 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.)

 0.1. Size:1801K  vishay
 sihfi640g.pdf pdf_icon

HFI640

IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr

 0.2. Size:1799K  vishay
 irfi640g sihfi640g.pdf pdf_icon

HFI640

IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr

 9.1. Size:1398K  vishay
 irfi644g sihfi644g.pdf pdf_icon

HFI640

IRFI644G, SiHFI644GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.28f = 60 Hz)RoHS*Qg (Max.) (nC) 68COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 35 Low Thermal ResistanceConfiguration Si

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Datasheet: HFH10N80 , HFH11N90 , HFH13N80 , HFH18N50S , HFH19N60 , HFH6N90 , HFH7N80 , HFI50N06 , IRFP064N , HFN6N70U , HFP10N60S , HFP10N60U , HFP10N65S , HFP10N65U , HFP10N80 , HFP11N40 , HFP12N60S .

History: SP8M70 | AFN07N65T220T | AP0103GMT-HF | QM4014D | IRF7805ZPBF-1 | DN2535 | SWB060R65E7T

Keywords - HFI640 MOSFET datasheet

 HFI640 cross reference
 HFI640 equivalent finder
 HFI640 lookup
 HFI640 substitution
 HFI640 replacement

 

 
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