HFI640 - описание и поиск аналогов

 ..1. Size:191K  semihow
 hfi640 hfw640.pdf 

Mar 2008 BVDSS = 200 V RDS(on) typ HFW640 / HFI640 ID = 18 A 200V N-Channel MOSFET D2-PAK I2-PAK 2 FEATURES 1 3 1 2 3 Originative New Design HFW640 HFI640 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 37 nC (Typ.)

 0.1. Size:1801K  vishay
 sihfi640g.pdf 

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr

 0.2. Size:1799K  vishay
 irfi640g sihfi640g.pdf 

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr

 9.1. Size:1398K  vishay
 irfi644g sihfi644g.pdf 

IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si

 9.2. Size:1399K  vishay
 sihfi644g.pdf 

IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si