HFP10N65S Specs and Replacement

Type Designator: HFP10N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm

Package: TO-220

HFP10N65S substitution

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HFP10N65S datasheet

 ..1. Size:172K  semihow
 hfp10n65s.pdf pdf_icon

HFP10N65S

March 2014 BVDSS = 650 V RDS(on) typ HFP10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

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 hfp10n65u.pdf pdf_icon

HFP10N65S

March 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFP10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

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 hfp10n60u.pdf pdf_icon

HFP10N65S

Feb 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFP10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 7.2. Size:189K  semihow
 hfp10n60s.pdf pdf_icon

HFP10N65S

Nov 2007 BVDSS = 600 V RDS(on) typ HFP10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

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Detailed specifications: HFH19N60, HFH6N90, HFH7N80, HFI50N06, HFI640, HFN6N70U, HFP10N60S, HFP10N60U, IRF740, HFP10N65U, HFP10N80, HFP11N40, HFP12N60S, HFP12N60U, HFP12N65S, HFP12N65U, HFP13N50S

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