All MOSFET. HFP10N65S Datasheet

 

HFP10N65S Datasheet and Replacement


   Type Designator: HFP10N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm
   Package: TO-220
 
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HFP10N65S Datasheet (PDF)

 ..1. Size:172K  semihow
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HFP10N65S

March 2014BVDSS = 650 VRDS(on) typ HFP10N65SID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 6.1. Size:201K  semihow
 hfp10n65u.pdf pdf_icon

HFP10N65S

March 2013BVDSS = 650 VRDS(on) typ = 0.8 HFP10N65U ID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 7.1. Size:201K  semihow
 hfp10n60u.pdf pdf_icon

HFP10N65S

Feb 2013BVDSS = 600 VRDS(on) typ = 0.67 HFP10N60U ID = 9.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

 7.2. Size:189K  semihow
 hfp10n60s.pdf pdf_icon

HFP10N65S

Nov 2007BVDSS = 600 VRDS(on) typ HFP10N60SID = 9.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(

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Datasheet: HFH19N60 , HFH6N90 , HFH7N80 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S , HFP10N60U , IRF740 , HFP10N65U , HFP10N80 , HFP11N40 , HFP12N60S , HFP12N60U , HFP12N65S , HFP12N65U , HFP13N50S .

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