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HFP10N80 Spec and Replacement


   Type Designator: HFP10N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
   Package: TO-220

 HFP10N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFP10N80 Specs

 ..1. Size:207K  semihow
 hfp10n80.pdf pdf_icon

HFP10N80

Dec 2010 BVDSS = 800 V RDS(on) typ HFP10N80 ID = 9.4 A 800V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Low... See More ⇒

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 hfp10n65s.pdf pdf_icon

HFP10N80

March 2014 BVDSS = 650 V RDS(on) typ HFP10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

 8.2. Size:201K  semihow
 hfp10n60u.pdf pdf_icon

HFP10N80

Feb 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFP10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 8.3. Size:189K  semihow
 hfp10n60s.pdf pdf_icon

HFP10N80

Nov 2007 BVDSS = 600 V RDS(on) typ HFP10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

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Detailed specifications: HFH7N80 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S , HFP10N60U , HFP10N65S , HFP10N65U , 20N60 , HFP11N40 , HFP12N60S , HFP12N60U , HFP12N65S , HFP12N65U , HFP13N50S , HFP13N50U , HFP13N60U .

Keywords - HFP10N80 MOSFET specs

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