HFP10N80 PDF and Equivalents Search

 

HFP10N80 Specs and Replacement

Type Designator: HFP10N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 230 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO-220

HFP10N80 substitution

- MOSFET ⓘ Cross-Reference Search

 

HFP10N80 datasheet

 ..1. Size:207K  semihow
 hfp10n80.pdf pdf_icon

HFP10N80

Dec 2010 BVDSS = 800 V RDS(on) typ HFP10N80 ID = 9.4 A 800V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Low... See More ⇒

 8.1. Size:172K  semihow
 hfp10n65s.pdf pdf_icon

HFP10N80

March 2014 BVDSS = 650 V RDS(on) typ HFP10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

 8.2. Size:201K  semihow
 hfp10n60u.pdf pdf_icon

HFP10N80

Feb 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFP10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 8.3. Size:189K  semihow
 hfp10n60s.pdf pdf_icon

HFP10N80

Nov 2007 BVDSS = 600 V RDS(on) typ HFP10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

SHOW MORE

Detailed specifications: HFH7N80 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S , HFP10N60U , HFP10N65S , HFP10N65U , 20N60 , HFP11N40 , HFP12N60S , HFP12N60U , HFP12N65S , HFP12N65U , HFP13N50S , HFP13N50U , HFP13N60U .

Keywords - HFP10N80 MOSFET specs

 HFP10N80 cross reference
 HFP10N80 equivalent finder
 HFP10N80 pdf lookup
 HFP10N80 substitution
 HFP10N80 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
↑ Back to Top
.