HFP12N65S Specs and Replacement

Type Designator: HFP12N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: TO-220

HFP12N65S substitution

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HFP12N65S datasheet

 ..1. Size:246K  semihow
 hfp12n65s.pdf pdf_icon

HFP12N65S

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFP12N65S ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) Ext... See More ⇒

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 hfp12n65u.pdf pdf_icon

HFP12N65S

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFP12N65U ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

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 hfp12n60u.pdf pdf_icon

HFP12N65S

July 2014 BVDSS = 600 V RDS(on) typ = 0.53 HFP12N60U ID = 12 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 7.2. Size:255K  semihow
 hfp12n60s.pdf pdf_icon

HFP12N65S

Nov 2007 BVDSS = 600 V RDS(on) typ = 0.53 HFP12N60S ID = 12 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) Ext... See More ⇒

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Detailed specifications: HFP10N60S, HFP10N60U, HFP10N65S, HFP10N65U, HFP10N80, HFP11N40, HFP12N60S, HFP12N60U, IRFP460, HFP12N65U, HFP13N50S, HFP13N50U, HFP13N60U, HFP13N65U, HFP18N50U, HFP2N60S, HFP2N60U

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