HFP5N65S Specs and Replacement

Type Designator: HFP5N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm

Package: TO-220

HFP5N65S substitution

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HFP5N65S datasheet

 ..1. Size:207K  semihow
 hfp5n65s.pdf pdf_icon

HFP5N65S

Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFP5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Unrivalled Gate Charge 10 5 nC (Typ ) ... See More ⇒

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 hfp5n65u.pdf pdf_icon

HFP5N65S

March 2013 BVDSS = 650 V RDS(on) typ HFP5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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 hfp5n60f hfs5n60f.pdf pdf_icon

HFP5N65S

Oct 2016 HFP5N60F / HFS5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFP5N60F HFS5N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unle... See More ⇒

 8.2. Size:205K  semihow
 hfp5n60u.pdf pdf_icon

HFP5N65S

May 2012 BVDSS = 600 V RDS(on) typ HFP5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area L... See More ⇒

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Detailed specifications: HFP2N90, HFP3N80, HFP4N50, HFP4N90, HFP5N50S, HFP5N50U, HFP5N60S, HFP5N60U, IRF9540, HFP5N65U, HFP5N70S, HFP6N60U, HFP6N65U, HFP6N70U, HFP6N90, HFP730S, HFP730U

Keywords - HFP5N65S MOSFET specs

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