All MOSFET. HFP6N70U Datasheet

 

HFP6N70U MOSFET. Datasheet pdf. Equivalent

Type Designator: HFP6N70U

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm

Package: TO-220

HFP6N70U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HFP6N70U Datasheet (PDF)

1.1. hfp6n70u.pdf Size:197K _update_mosfet

HFP6N70U
HFP6N70U

March 2013 BVDSS = 700 V RDS(on) typ = 1.8 HFP6N70U ID = 6.0 A 700V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

5.1. hfp6n65u.pdf Size:201K _update_mosfet

HFP6N70U
HFP6N70U

July 2012 BVDSS = 650 V RDS(on) typ HFP6N65U ID = 6.0 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

5.2. hfp6n60u.pdf Size:198K _update_mosfet

HFP6N70U
HFP6N70U

July 2012 BVDSS = 600 V RDS(on) typ HFP6N60U ID = 6.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 5.3. hfp6n90.pdf Size:184K _update_mosfet

HFP6N70U
HFP6N70U

Dec 2005 BVDSS = 900 V RDS(on) typ HFP6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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