All MOSFET. HFP8N70U Datasheet

 

HFP8N70U Datasheet and Replacement


   Type Designator: HFP8N70U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-220
 

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HFP8N70U Datasheet (PDF)

 ..1. Size:198K  semihow
 hfp8n70u.pdf pdf_icon

HFP8N70U

March 2013BVDSS = 700 VRDS(on) typ = 1.3 HFP8N70U ID = 7.5 A700V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 9.1. Size:197K  semihow
 hfp8n60u.pdf pdf_icon

HFP8N70U

August 2012BVDSS = 600 VRDS(on) typ HFP8N60U ID = 7.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 9.2. Size:198K  semihow
 hfp8n65u.pdf pdf_icon

HFP8N70U

March 2013BVDSS = 650 VRDS(on) typ HFP8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 9.3. Size:192K  semihow
 hfp8n65s.pdf pdf_icon

HFP8N70U

Sep 2009BVDSS = 650 VRDS(on) typ HFP8N65SID = 7.2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

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Datasheet: HFP6N70U , HFP6N90 , HFP730S , HFP730U , HFP8N60S , HFP8N60U , HFP8N65S , HFP8N65U , IRF9540N , HFP9N50 , HFS10N60S , HFS10N60U , HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 , HFS12N60S .

History: SQ1431EH | IPT026N10N5 | NX7002BK | FDS4072N3 | TK16G60W5 | QM3006M3 | AUIRFP4468

Keywords - HFP8N70U MOSFET datasheet

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