HFS10N65S Specs and Replacement

Type Designator: HFS10N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm

Package: TO-220F

HFS10N65S substitution

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HFS10N65S datasheet

 ..1. Size:159K  semihow
hfs10n65s.pdf pdf_icon

HFS10N65S

March 2014 BVDSS = 650 V RDS(on) typ HFS10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 6.1. Size:302K  semihow
hfs10n65u.pdf pdf_icon

HFS10N65S

Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFS10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

 6.2. Size:634K  semihow
hfs10n65js.pdf pdf_icon

HFS10N65S

Feb 2023 HFS10N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 10 A Excellent Switching Characteristics RDS(on), Typ 0.82 100% Avalanche Tested Qg, Typ 36.3 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum ... See More ⇒

 7.1. Size:302K  semihow
hfs10n60u.pdf pdf_icon

HFS10N65S

Oct 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

Detailed specifications: HFP8N60S, HFP8N60U, HFP8N65S, HFP8N65U, HFP8N70U, HFP9N50, HFS10N60S, HFS10N60U, 12N60, HFS10N65U, HFS10N80, HFS11N40, HFS12N60S, HFS12N60U, HFS12N65S, HFS12N65U, HFS13N50S

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs