All MOSFET. HFS12N60S Datasheet

 

HFS12N60S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFS12N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 51 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 12 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 38 nC
   Rise Time (tr): 85 nS
   Drain-Source Capacitance (Cd): 185 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm
   Package: TO-220F

 HFS12N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFS12N60S Datasheet (PDF)

 ..1. Size:252K  semihow
 hfs12n60s.pdf

HFS12N60S HFS12N60S

Nov 2007BVDSS = 600 VRDS(on) typ = 0.53 HFS12N60SID = 12 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

 6.1. Size:158K  semihow
 hfs12n60u.pdf

HFS12N60S HFS12N60S

July 2014BVDSS = 600 VRDS(on) typ = 0.53 HFS12N60UID = 12 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

 7.1. Size:806K  semihow
 hfs12n65sa.pdf

HFS12N60S HFS12N60S

July 2021BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SAID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 41 nC (Typ.) Extended Safe Ope

 7.2. Size:240K  semihow
 hfs12n65s.pdf

HFS12N60S HFS12N60S

Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

 7.3. Size:598K  semihow
 hfs12n65js.pdf

HFS12N60S HFS12N60S

Mar. 2023HFS12N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 12 A Excellent Switching CharacteristicsRDS(on), Typ 0.7 100% Avalanche TestedQg, Typ 44.4 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

 7.4. Size:158K  semihow
 hfs12n65u.pdf

HFS12N60S HFS12N60S

July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65UID = 12 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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