Справочник MOSFET. HFS12N60S

 

HFS12N60S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HFS12N60S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 185 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для HFS12N60S

   - подбор ⓘ MOSFET транзистора по параметрам

 

HFS12N60S Datasheet (PDF)

 ..1. Size:252K  semihow
 hfs12n60s.pdf pdf_icon

HFS12N60S

Nov 2007BVDSS = 600 VRDS(on) typ = 0.53 HFS12N60SID = 12 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

 6.1. Size:158K  semihow
 hfs12n60u.pdf pdf_icon

HFS12N60S

July 2014BVDSS = 600 VRDS(on) typ = 0.53 HFS12N60UID = 12 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

 7.1. Size:806K  semihow
 hfs12n65sa.pdf pdf_icon

HFS12N60S

July 2021BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SAID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 41 nC (Typ.) Extended Safe Ope

 7.2. Size:240K  semihow
 hfs12n65s.pdf pdf_icon

HFS12N60S

Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HFP8N70U , HFP9N50 , HFS10N60S , HFS10N60U , HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 , IRLZ44N , HFS12N60U , HFS12N65S , HFS12N65U , HFS13N50S , HFS13N50U , HFS13N60U , HFS13N65U , HFS18N50U .

History: PTA03N150 | APT5018BFLL | STD30NF06LT4 | SHD224701 | BL10N80-P | STB10NK60ZT4 | IRLML6246TRPBF

 

 
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