HFS12N60S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HFS12N60S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 51 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 38 nC
Время нарастания (tr): 85 ns
Выходная емкость (Cd): 185 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.65 Ohm
Тип корпуса: TO-220F
HFS12N60S Datasheet (PDF)
hfs12n60s.pdf
Nov 2007BVDSS = 600 VRDS(on) typ = 0.53 HFS12N60SID = 12 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E
hfs12n60u.pdf
July 2014BVDSS = 600 VRDS(on) typ = 0.53 HFS12N60UID = 12 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo
hfs12n65sa.pdf
July 2021BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SAID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 41 nC (Typ.) Extended Safe Ope
hfs12n65s.pdf
Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65SID = 12 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E
hfs12n65js.pdf
Mar. 2023HFS12N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 12 A Excellent Switching CharacteristicsRDS(on), Typ 0.7 100% Avalanche TestedQg, Typ 44.4 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum
hfs12n65u.pdf
July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFS12N65UID = 12 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo
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