All MOSFET. HFS50N06 Datasheet

 

HFS50N06 Datasheet and Replacement


   Type Designator: HFS50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220F
 

 HFS50N06 substitution

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HFS50N06 Datasheet (PDF)

 ..1. Size:227K  semihow
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HFS50N06

July 2005BVDSS = 60 VRDS(on) = 18 mHFS50N06ID = 50 A60V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) :

 0.1. Size:368K  semihow
 hfp50n06a hfs50n06a.pdf pdf_icon

HFS50N06

Oct 2016HFP50N06A / HFS50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFP50N06A HFS50N06ASymbolTO-220 TO-220FSS

Datasheet: HFS2N65S , HFS2N65U , HFS2N70S , HFS2N90 , HFS3N80 , HFS4N50 , HFS4N60 , HFS4N90 , IRF530 , HFS5N50S , HFS5N50U , HFS5N60S , HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S , HFS5N80 .

Keywords - HFS50N06 MOSFET datasheet

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