HFS640 Specs and Replacement

Type Designator: HFS640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220F

HFS640 substitution

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HFS640 datasheet

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 hfs640.pdf pdf_icon

HFS640

Nov 2005 BVDSS = 200 V RDS(on) typ HFS640 ID = 18* A 200V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 37 nC (Typ.) Extended Safe Operating Area ... See More ⇒

Detailed specifications: HFS5N50U, HFS5N60S, HFS5N60U, HFS5N65S, HFS5N65U, HFS5N70S, HFS5N80, HFS630, IRFB31N20D, HFS6N60U, HFS6N65U, HFS6N70U, HFS6N90, HFS730, HFS730U, HFS740, HFS7N80

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.