HFS640 Datasheet and Replacement
Type Designator: HFS640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220F
HFS640 substitution
HFS640 Datasheet (PDF)
hfs640.pdf

Nov 2005BVDSS = 200 VRDS(on) typ HFS640ID = 18* A200V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area
Datasheet: HFS5N50U , HFS5N60S , HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S , HFS5N80 , HFS630 , IRFZ46N , HFS6N60U , HFS6N65U , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 .
History: P1625ED
Keywords - HFS640 MOSFET datasheet
HFS640 cross reference
HFS640 equivalent finder
HFS640 lookup
HFS640 substitution
HFS640 replacement
History: P1625ED



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