All MOSFET. HFS640 Datasheet

 

HFS640 Datasheet and Replacement


   Type Designator: HFS640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220F
 

 HFS640 substitution

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HFS640 Datasheet (PDF)

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HFS640

Nov 2005BVDSS = 200 VRDS(on) typ HFS640ID = 18* A200V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area

Datasheet: HFS5N50U , HFS5N60S , HFS5N60U , HFS5N65S , HFS5N65U , HFS5N70S , HFS5N80 , HFS630 , IRF730 , HFS6N60U , HFS6N65U , HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 .

History: PHB176NQ04T | MMBF5459 | 5N65A | CS1N60D | NCEP02515F | NP80N055ELE | 50N06AF

Keywords - HFS640 MOSFET datasheet

 HFS640 cross reference
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