IXTM75N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTM75N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 180 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 1300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO204
IXTM75N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTM75N10 Datasheet (PDF)
Datasheet: IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A , IXTM6N90 , IXTM6N90A , AON7403 , IXTN21N100 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA , IXTP15N30MB , IXTP1N100 , IXTP22N15MA , IXTP22N15MB .