All MOSFET. IXTM75N10 Datasheet

 

IXTM75N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTM75N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO204

 IXTM75N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTM75N10 Datasheet (PDF)

Datasheet: IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A , IXTM6N90 , IXTM6N90A , AON7403 , IXTN21N100 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA , IXTP15N30MB , IXTP1N100 , IXTP22N15MA , IXTP22N15MB .

 

 
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