HFS6N90 MOSFET Datasheet: N-Ch, 900V, 6A. Full specification with pinout and replacement list

HFS6N90 Specs and Replacement

   Type Designator: HFS6N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220F

HFS6N90 substitution

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HFS6N90 datasheet

..1. Size:173K semihow
hfs6n90.pdf pdf_icon

Dec 2005 BVDSS = 900 V RDS(on) typ HFS6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

9.1. Size:306K semihow
hfs6n60u.pdf pdf_icon

July 2012 BVDSS = 600 V RDS(on) typ HFS6N60U ID = 6.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

9.2. Size:305K semihow
hfs6n70u.pdf pdf_icon

March 2013 BVDSS = 700 V RDS(on) typ = 1.8 HFS6N70U ID = 6.0 A 700V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

9.3. Size:306K semihow
hfs6n65u.pdf pdf_icon

July 2012 BVDSS = 650 V RDS(on) typ HFS6N65U ID = 6.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

Detailed specifications: HFS5N65U , HFS5N70S , HFS5N80 , HFS630 , HFS640 , HFS6N60U , HFS6N65U , HFS6N70U , IRFZ48N , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 , HFS8N60S , HFS8N60U .