All MOSFET. HFS6N90 Datasheet

 

HFS6N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: HFS6N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 35 nC

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 2.4 Ohm

Package: TO-220F

HFS6N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HFS6N90 Datasheet (PDF)

1.1. hfs6n90.pdf Size:173K _update_mosfet

HFS6N90 HFS6N90

Dec 2005 BVDSS = 900 V RDS(on) typ HFS6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(

5.1. hfs6n60u.pdf Size:306K _update_mosfet

HFS6N90 HFS6N90

July 2012 BVDSS = 600 V RDS(on) typ HFS6N60U ID = 6.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

5.2. hfs6n65u.pdf Size:306K _update_mosfet

HFS6N90 HFS6N90

July 2012 BVDSS = 650 V RDS(on) typ HFS6N65U ID = 6.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 5.3. hfs6n70u.pdf Size:305K _update_mosfet

HFS6N90 HFS6N90

March 2013 BVDSS = 700 V RDS(on) typ = 1.8 HFS6N70U ID = 6.0 A 700V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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