Справочник MOSFET. HFS6N90

 

HFS6N90 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HFS6N90
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для HFS6N90

   - подбор ⓘ MOSFET транзистора по параметрам

 

HFS6N90 Datasheet (PDF)

 ..1. Size:173K  semihow
hfs6n90.pdfpdf_icon

HFS6N90

Dec 2005BVDSS = 900 VRDS(on) typ HFS6N90ID = 6.0 A900V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(

 9.1. Size:306K  semihow
hfs6n60u.pdfpdf_icon

HFS6N90

July 2012BVDSS = 600 VRDS(on) typ HFS6N60U ID = 6.0 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 9.2. Size:305K  semihow
hfs6n70u.pdfpdf_icon

HFS6N90

March 2013BVDSS = 700 VRDS(on) typ = 1.8 HFS6N70U ID = 6.0 A700V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 9.3. Size:306K  semihow
hfs6n65u.pdfpdf_icon

HFS6N90

July 2012BVDSS = 650 VRDS(on) typ HFS6N65U ID = 6.0 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

Другие MOSFET... HFS5N65U , HFS5N70S , HFS5N80 , HFS630 , HFS640 , HFS6N60U , HFS6N65U , HFS6N70U , RU7088R , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 , HFS8N60S , HFS8N60U .

History: HY4008W | IPF13N03LAG | KHB9D0N90F1 | SL2102 | IXFP36N20X3 | CMI80N06 | JSM9435

 

 
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