All MOSFET. HFS730 Datasheet

 

HFS730 Datasheet and Replacement


   Type Designator: HFS730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
 

 HFS730 substitution

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HFS730 Datasheet (PDF)

 ..1. Size:258K  semihow
 hfs730.pdf pdf_icon

HFS730

Dec 2005BVDSS = 400 VRDS(on) typ HFS730ID = 5.5 A400V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

 0.1. Size:404K  semihow
 hfp730f hfs730f.pdf pdf_icon

HFS730

Dec 2016HFP730F / HFS730F400V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 400 V Very Low Intrinsic CapacitancesID 6A Excellent Switching CharacteristicsRDS(on), Typ 0.8 100% Avalanche TestedQg, Typ 13 nC RoHS CompliantHFP730F HFS730FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unless oth

 0.2. Size:281K  semihow
 hfs730s.pdf pdf_icon

HFS730

May 2015BVDSS = 400 VRDS(on) typ = 0.75 HFS730S ID = 6.0 A400V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lo

 0.3. Size:194K  semihow
 hfs730u.pdf pdf_icon

HFS730

Oct 2013BVDSS = 400 VRDS(on) typ = 0.75 HFS730U ID = 6.0 A400V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lo

SHOW MORE

Datasheet: HFS5N70S , HFS5N80 , HFS630 , HFS640 , HFS6N60U , HFS6N65U , HFS6N70U , HFS6N90 , IRFZ46N , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 , HFS8N60S , HFS8N60U , HFS8N65S .

History: FDBL86062-F085 | VBZ7001 | NP84N075KUE | SQ4940EY | HFS6N65U

Keywords - HFS730 MOSFET datasheet

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