HFS830 Specs and Replacement

Type Designator: HFS830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220F

HFS830 substitution

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HFS830 datasheet

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 hfs830.pdf pdf_icon

HFS830

Dec 2005 BVDSS = 500 V RDS(on) typ HFS830 ID = 4.5 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒

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 hfp830f hfs830f.pdf pdf_icon

HFS830

May 2016 HFP830F / HFS830F 500V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 500 V Very Low Intrinsic Capacitances ID 5 A Excellent Switching Characteristics RDS(on), Typ 1.2 100% Avalanche Tested Qg, Typ 12 nC RoHS Compliant HFP830F HFS830F Symbol TO-220 TO-220F S S D D G G Absolute Ma... See More ⇒

Detailed specifications: HFS6N60U, HFS6N65U, HFS6N70U, HFS6N90, HFS730, HFS730U, HFS740, HFS7N80, IRFB7545, HFS840, HFS8N60S, HFS8N60U, HFS8N65S, HFS8N65U, HFS8N70S, HFS8N70U, HFS8N80

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.