HFS8N65S MOSFET Datasheet: N-Ch, 650V, 7.2A. Full specification with pinout and replacement list

HFS8N65S Specs and Replacement

   Type Designator: HFS8N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F

HFS8N65S substitution

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HFS8N65S datasheet

..1. Size:249K semihow
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Sep 2009 BVDSS = 650 V RDS(on) typ = 1.16 HFS8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Unrivalled Gate Charge 22 nC (Typ ) E... See More ⇒

0.1. Size:736K semihow
hfs8n65sa.pdf pdf_icon

August 2022 BVDSS = 650 V RDS(on) typ = 1.16 HFS8N65SA ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 21 nC (Typ.) Extended Safe O... See More ⇒

7.1. Size:307K semihow
hfs8n65u.pdf pdf_icon

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area... See More ⇒

7.2. Size:596K semihow
hfs8n65js.pdf pdf_icon

Mar. 2023 HFS8N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 7.2 A Excellent Switching Characteristics RDS(on), Typ 1.04 100% Avalanche Tested Qg, Typ 25.3 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum... See More ⇒

Detailed specifications: HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 , HFS8N60S , HFS8N60U , RU7088R , HFS8N65U , HFS8N70S , HFS8N70U , HFS8N80 , HFS9N50 , HFT1N60S , HFU630 , HFW10N60S .