All MOSFET. HFS8N65S Datasheet

 

HFS8N65S Datasheet and Replacement


   Type Designator: HFS8N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F
 

 HFS8N65S substitution

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HFS8N65S Datasheet (PDF)

 ..1. Size:249K  semihow
hfs8n65s.pdf pdf_icon

HFS8N65S

Sep 2009BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Unrivalled Gate Charge : 22 nC (Typ ) E

 0.1. Size:736K  semihow
hfs8n65sa.pdf pdf_icon

HFS8N65S

August 2022BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SAID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 21 nC (Typ.) Extended Safe O

 7.1. Size:307K  semihow
hfs8n65u.pdf pdf_icon

HFS8N65S

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 7.2. Size:596K  semihow
hfs8n65js.pdf pdf_icon

HFS8N65S

Mar. 2023HFS8N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 7.2 A Excellent Switching CharacteristicsRDS(on), Typ 1.04 100% Avalanche TestedQg, Typ 25.3 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

Datasheet: HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 , HFS8N60S , HFS8N60U , MMD60R360PRH , HFS8N65U , HFS8N70S , HFS8N70U , HFS8N80 , HFS9N50 , HFT1N60S , HFU630 , HFW10N60S .

History: STM4806

Keywords - HFS8N65S MOSFET datasheet

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