HFW10N60S Specs and Replacement

Type Designator: HFW10N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: D2-PAK

HFW10N60S substitution

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HFW10N60S datasheet

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HFW10N60S

May 2010 BVDSS = 600 V RDS(on) typ HFW10N60S ID = 9.5 A 600V N-Channel MOSFET D2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ... See More ⇒

Detailed specifications: HFS8N65S, HFS8N65U, HFS8N70S, HFS8N70U, HFS8N80, HFS9N50, HFT1N60S, HFU630, IRFZ44N, HFW11N40, HFW12N60S, HFW50N06, HFW5N50S, HFW5N60S, HFW5N65S, HFW5N65U, HFW640

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.