All MOSFET. HFW11N40 Datasheet

 

HFW11N40 Datasheet and Replacement


   Type Designator: HFW11N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: D2-PAK
 

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HFW11N40 Datasheet (PDF)

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HFW11N40

Dec 2005BVDSS = 400 VRDS(on) typ HFW11N40ID = 11.4 A400V N-Channel MOSFETD2-PAKFEATURES Originative New Design Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

Datasheet: HFS8N65U , HFS8N70S , HFS8N70U , HFS8N80 , HFS9N50 , HFT1N60S , HFU630 , HFW10N60S , IRF3205 , HFW12N60S , HFW50N06 , HFW5N50S , HFW5N60S , HFW5N65S , HFW5N65U , HFW640 , HFW6N90 .

History: IRFZ34NSTR | IPDH4N03LAG | KP801B | 2SK1066 | SI3469DV | MTP4435AQ8 | SWB035R08ET

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