All MOSFET. HFW5N65U Datasheet

 

HFW5N65U Datasheet and Replacement


   Type Designator: HFW5N65U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 123 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: D2-PAK
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HFW5N65U Datasheet (PDF)

 ..1. Size:683K  semihow
 hfw5n65u.pdf pdf_icon

HFW5N65U

Jan 2013BVDSS = 650 VRDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A650V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New Design Superior Avalanche Rugged TechnologyHFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Exte

 7.1. Size:174K  semihow
 hfw5n65s.pdf pdf_icon

HFW5N65U

Mar 2010BVDSS = 650 VRDS(on) typ HFW5N65S / HFI5N65SID = 4.2 A650V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N65S HFI5N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

 8.1. Size:175K  semihow
 hfw5n60s.pdf pdf_icon

HFW5N65U

Sep 2009BVDSS = 600 VRDS(on) typ HFW5N60S / HFI5N60SID = 4.5 A600V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N60S HFI5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

 8.2. Size:175K  semihow
 hfw5n60s hfi5n60s.pdf pdf_icon

HFW5N65U

Sep 2009BVDSS = 600 VRDS(on) typ HFW5N60S / HFI5N60SID = 4.5 A600V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N60S HFI5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

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History: CHM85A3PAGP | TK7P65W | SFFX054Z

Keywords - HFW5N65U MOSFET datasheet

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