All MOSFET. HFW5N65U Datasheet

 

HFW5N65U MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFW5N65U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 123 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: D2-PAK

 HFW5N65U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFW5N65U Datasheet (PDF)

 ..1. Size:683K  semihow
 hfw5n65u.pdf

HFW5N65U HFW5N65U

Jan 2013BVDSS = 650 VRDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A650V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New Design Superior Avalanche Rugged TechnologyHFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Exte

 7.1. Size:174K  semihow
 hfw5n65s.pdf

HFW5N65U HFW5N65U

Mar 2010BVDSS = 650 VRDS(on) typ HFW5N65S / HFI5N65SID = 4.2 A650V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N65S HFI5N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

 8.1. Size:175K  semihow
 hfw5n60s.pdf

HFW5N65U HFW5N65U

Sep 2009BVDSS = 600 VRDS(on) typ HFW5N60S / HFI5N60SID = 4.5 A600V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N60S HFI5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

 8.2. Size:175K  semihow
 hfw5n60s hfi5n60s.pdf

HFW5N65U HFW5N65U

Sep 2009BVDSS = 600 VRDS(on) typ HFW5N60S / HFI5N60SID = 4.5 A600V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N60S HFI5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 4N90G-TF3-T | SI4833DY | STU409DH | BUK7506-30 | FDMC7570S | BUK7619-100B | 2N6761

 

 
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