HUF75329D3ST Specs and Replacement

Type Designator: HUF75329D3ST

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 128 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TO-252AA

HUF75329D3ST substitution

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HUF75329D3ST datasheet

 ..1. Size:660K  fairchild semi
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HUF75329D3ST

HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 m 20A, 55V These N-Channel power MOSFETs are manufactured using Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou... See More ⇒

 3.1. Size:715K  onsemi
huf75329d3s.pdf pdf_icon

HUF75329D3ST

HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 m 20A, 55V These N-Channel power MOSFETs are manufactured Simulation Models using the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on- Models resistance per silicon area, resulting in o... See More ⇒

 4.1. Size:225K  fairchild semi
huf75329d3-s.pdf pdf_icon

HUF75329D3ST

HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the... See More ⇒

 6.1. Size:252K  fairchild semi
huf75329g3 huf75329p3 huf75329s3s.pdf pdf_icon

HUF75329D3ST

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on t... See More ⇒

Detailed specifications: HFW9N50, HP8KA1, HRD13N10K, HRP75N75V, HRS75N75V, HS8K11, HT-3201, HTMN5130SSD, 10N60, HUF75332S3ST, HUF75337S3, HUF75343S3, HUF75343S3ST, HUF75344A3, HUF75345S3, HUF75345S3ST, HUF75531SK8T

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