HUF75329D3ST - Даташиты. Аналоги. Основные параметры
Наименование производителя: HUF75329D3ST
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 128 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 405 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
Тип корпуса: TO-252AA
Аналог (замена) для HUF75329D3ST
HUF75329D3ST Datasheet (PDF)
huf75329d3st.pdf
HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured using Simulation Modelsthe innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Modelssilicon area, resulting in ou
huf75329d3s.pdf
HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFETFeatures55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on-Modelsresistance per silicon area, resulting in o
huf75329d3-s.pdf
HUF75329D3, HUF75329D3SData Sheet December 200120A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models achieves the
huf75329g3 huf75329p3 huf75329s3s.pdf
HUF75329G3, HUF75329P3, HUF75329S3SData Sheet December 200149A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on t
Другие MOSFET... HFW9N50 , HP8KA1 , HRD13N10K , HRP75N75V , HRS75N75V , HS8K11 , HT-3201 , HTMN5130SSD , 10N60 , HUF75332S3ST , HUF75337S3 , HUF75343S3 , HUF75343S3ST , HUF75344A3 , HUF75345S3 , HUF75345S3ST , HUF75531SK8T .
History: HM3207D | VBZE04N03 | VBZE06N02 | VBZC8205B | VBZC8205A | STD3NM50T4
History: HM3207D | VBZE04N03 | VBZE06N02 | VBZC8205B | VBZC8205A | STD3NM50T4
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