All MOSFET. IXTP1N100 Datasheet

 

IXTP1N100 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTP1N100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 54 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO220

IXTP1N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP1N100 Datasheet (PDF)

1.1. ixta1n100p ixtp1n100p.pdf Size:95K _ixys

IXTP1N100
IXTP1N100

Advance Technical Information IXTA 1N100P VDSS = 1000 V PolarHVTM IXTP 1N100P ID25 = 1.2 A Power MOSFET ? RDS(on) = 13 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G VGS Continuous 20 V S (TAB) VGSM Transient 30 V ID25 TC = 25C 1.2 A IDM TC =

1.2. ixta1n100 ixtp1n100.pdf Size:535K _ixys

IXTP1N100
IXTP1N100

VDSS = 1000 V IXTA 1N100 High Voltage MOSFET IXTP 1N100 ID25 = 1.5 A ? RDS(on) = 11 ? ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 30 V D (TAB) G VGSM Transient 40 V D S ID25 TC = 25C 1.5 A IDM TC = 25C, pulse width lim

4.1. ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf Size:161K _ixys

IXTP1N100
IXTP1N100

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150

4.2. ixta1n80 ixtp1n80 ixty1n80.pdf Size:60K _ixys

IXTP1N100
IXTP1N100

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 TC = 25C 750 mA TO-2

Datasheet: IXTM6N90 , IXTM6N90A , IXTM75N10 , IXTN21N100 , IXTP15N25MA , IXTP15N25MB , IXTP15N30MA , IXTP15N30MB , IRFP260M , IXTP22N15MA , IXTP22N15MB , IXTP22N20MA , IXTP22N20MB , IXTP2N80 , IXTP30N08MA , IXTP30N08MB , IXTP30N10MA .

 


IXTP1N100
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