All MOSFET. HUF75829D3 Datasheet

 

HUF75829D3 Datasheet and Replacement


   Type Designator: HUF75829D3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-251AA
      - MOSFET Cross-Reference Search

 

HUF75829D3 Datasheet (PDF)

 ..1. Size:191K  fairchild semi
huf75829d3st huf75829d3 huf75829d3s hufa75829d3s hufa75829d3st.pdf pdf_icon

HUF75829D3

HUFA75829D3, HUFA75829D3SData Sheet December 200118A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN Ultra Low On-ResistanceSOURCE (FLANGE)DRAIN- rDS(ON) = 0.110, VGS = 10VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice

 8.1. Size:193K  fairchild semi
huf75852g3.pdf pdf_icon

HUF75829D3

HUF75852G3Data Sheet December 200175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comDRAIN(TAB) Pe

 8.2. Size:197K  fairchild semi
huf75842p3.pdf pdf_icon

HUF75829D3

HUF75842P3, HUF75842S3SData Sheet December 200143A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAIN Ultra Low On-ResistanceDRAIN (FLANGE)GATE- rDS(ON) = 0.042, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Therm

 8.3. Size:259K  fairchild semi
huf75852g3 f085.pdf pdf_icon

HUF75829D3

HUFA75852G3_F085Data Sheet December 201175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS CompliantDRAIN(TAB)Ordering InformationSymbolPART NUMBER PACKAGE BRA

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STD6N60M2 | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | UPA2756GR | IXTA08N120P

Keywords - HUF75829D3 MOSFET datasheet

 HUF75829D3 cross reference
 HUF75829D3 equivalent finder
 HUF75829D3 lookup
 HUF75829D3 substitution
 HUF75829D3 replacement

 

 
Back to Top

 


 
.