All MOSFET. HUF75831SK8T Datasheet

 

HUF75831SK8T MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUF75831SK8T
   Marking Code: 75831SK8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: MS-012AA

 HUF75831SK8T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUF75831SK8T Datasheet (PDF)

 ..1. Size:247K  fairchild semi
huf75831sk8t.pdf

HUF75831SK8T
HUF75831SK8T

HUF75831SK8Data Sheet December 20013A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.095, VGS = 10V Simulation Models5- Temperature Compensated PSPICE and SABER 1 Electrical Models2- Spice and SABER Thermal Impedance Models34- www.fairchildsemi.com Peak

 8.1. Size:193K  fairchild semi
huf75852g3.pdf

HUF75831SK8T
HUF75831SK8T

HUF75852G3Data Sheet December 200175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comDRAIN(TAB) Pe

 8.2. Size:197K  fairchild semi
huf75842p3.pdf

HUF75831SK8T
HUF75831SK8T

HUF75842P3, HUF75842S3SData Sheet December 200143A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAIN Ultra Low On-ResistanceDRAIN (FLANGE)GATE- rDS(ON) = 0.042, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Therm

 8.3. Size:259K  fairchild semi
huf75852g3 f085.pdf

HUF75831SK8T
HUF75831SK8T

HUFA75852G3_F085Data Sheet December 201175A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCE Ultra Low On-ResistanceDRAINGATE- rDS(ON) = 0.016, VGS = 10V Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS CompliantDRAIN(TAB)Ordering InformationSymbolPART NUMBER PACKAGE BRA

 8.4. Size:196K  fairchild semi
huf75842s3s huf75842s3st.pdf

HUF75831SK8T
HUF75831SK8T

HUF75842P3, HUF75842S3SData Sheet December 200143A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAIN Ultra Low On-ResistanceDRAIN (FLANGE)GATE- rDS(ON) = 0.042, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Therm

 8.5. Size:191K  fairchild semi
huf75829d3st huf75829d3 huf75829d3s hufa75829d3s hufa75829d3st.pdf

HUF75831SK8T
HUF75831SK8T

HUFA75829D3, HUFA75829D3SData Sheet December 200118A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN Ultra Low On-ResistanceSOURCE (FLANGE)DRAIN- rDS(ON) = 0.110, VGS = 10VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice

 8.6. Size:751K  onsemi
huf75852g3.pdf

HUF75831SK8T
HUF75831SK8T

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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