HUF76145S3 Datasheet and Replacement

HUF76145P3, HUF76145S3, HUF76145S3SData Sheet December 200375A, 30V, 0.0045 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045innovative UltraFET process. Temperature Compensating PSPICE ModelThis advanced process t

HUF76145P3, HUF76145S3SData Sheet December 200175A, 30V, 0.0045 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045innovative UltraFET process. Temperature Compensating PSPICE ModelThis advanced process technology

HUF76143P3, HUF76143S3SData Sheet September 1999 File Number 4400.775A, 30V, 0.0055 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0055innovative UltraFET process.This advanced process technology Temperature Compensating

HUF76132P3, HUF76132S3SData Sheet January 200375A, 30V, 0.011 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelachie

HUF76132SK8Data Sheet January 200311.5A, 30V, 0.0115 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 11.5A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Modelsl

HUF76121D3, HUF76121D3SData Sheet December 200120A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelac

HUF76131SK8Data Sheet January 200310A, 30V, 0.013 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 10A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Modellowes

HUF76113SK8Data Sheet January 20036.5A, 30V, 0.030 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 6.5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.030UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Modellowe

HUF76129P3, HUF76129S3SData Sheet September 1999 File Number 4395.656A, 30V, 0.016 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 56A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016innovative UltraFET process.This advanced process technology Temperature Compensating PS

HUF76139P3, HUF76139S3SData Sheet September 1999 File Number 4399.575A, 30V, 0.0075 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075innovative UltraFET process.This advanced process technology Temperature Compensating

HUF76107P3Data Sheet October 1999 File Number 4382.520A, 30V, 0.052 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power 20A, 30VMOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052the innovative UltraFET process.This advanced process technology Temperature Compensating PSPICE Modela

HUF76121SK8Data Sheet April 1999 File Number 47378A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 8A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced- Temperature Compensated PSPICE and SABERprocess technology achieves theElectrical Models

HUF76113DK8TMData Sheet June 2000 File Number 4387.56A, 30V, 0.032 Ohm, Dual N-Channel, FeaturesLogic Level UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 6A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.032UltraFET process. This advancedprocess technology achieves the Temperature Compensating PS

HUF76137P3, HUF76137S3SData Sheet September 1999 File Number 4398.675A, 30V, 0.009 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.009innovative UltraFET process.This advanced process technology Temperature Compensating PS

HUF76105SK8Data Sheet May 1999 File Number 4719.15.5A, 30V, 0.050 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 5.5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050UltraFET process. This advancedprocess technology achieves the Simulation Modelslowest possible

HUF76107D3, HUF76107D3SData Sheet July 1999 File Number 4701.120A, 30V, 0.052 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power 20A, 30VMOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052the innovative UltraFET process.This advanced process technology Temperature Compensating PSPICE

HUF76129D3, HUF76129D3SData Sheet September 1999 File Number 4394.520A, 30V, 0.016 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016innovative UltraFET process.This advanced process technology Temperature Compensating PS

HUF76121P3, HUF76121S3SData Sheet September 1999 File Number 4392.847A, 30V, 0.021 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 47A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021innovative UltraFET process.This advanced process technology Temperature Compensating PS

HUF76113T3STTMData Sheet June 2000 File Number 4388.34.7A, 30V, 0.031 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 4.7A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.031UltraFET process. This advancedprocess technology achieves the Temperature Compensating PS

HUF76105DK8TMData Sheet June 2000 File Number 4380.65A, 30V, 0.050 Ohm, Dual N-Channel, FeaturesLogic Level UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050UltraFET process. This advancedprocess technology achieves the Temperature Compensating