HUF76145S3. Аналоги и основные параметры
Наименование производителя: HUF76145S3
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 145 ns
Cossⓘ - Выходная емкость: 2520 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO-262AA
Аналог (замена) для HUF76145S3
- подборⓘ MOSFET транзистора по параметрам
HUF76145S3 даташит
..1. Size:300K fairchild semi
huf76145s3.pdf 
HUF76145P3, HUF76145S3, HUF76145S3S Data Sheet December 2003 75A, 30V, 0.0045 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045 innovative UltraFET process. Temperature Compensating PSPICE Model This advanced process t
6.1. Size:225K fairchild semi
huf76145p3-s3s.pdf 
HUF76145P3, HUF76145S3S Data Sheet December 2001 75A, 30V, 0.0045 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045 innovative UltraFET process. Temperature Compensating PSPICE Model This advanced process technology
7.1. Size:109K intersil
huf76143.pdf 
HUF76143P3, HUF76143S3S Data Sheet September 1999 File Number 4400.7 75A, 30V, 0.0055 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0055 innovative UltraFET process. This advanced process technology Temperature Compensating
8.1. Size:223K fairchild semi
huf76132p3-s3s.pdf 
HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model achie
8.2. Size:263K fairchild semi
huf76132sk8.pdf 
HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 11.5A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models l
8.3. Size:160K fairchild semi
huf76121d3.pdf 
HUF76121D3, HUF76121D3S Data Sheet December 2001 20A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model ac
8.4. Size:256K fairchild semi
huf76131sk8.pdf 
HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 10A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013 UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowes
8.5. Size:326K fairchild semi
huf76113sk8.pdf 
HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.030 UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowe
8.6. Size:118K intersil
huf76129p3-s3s.pdf 
HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 56A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS
8.7. Size:121K intersil
huf76139.pdf 
HUF76139P3, HUF76139S3S Data Sheet September 1999 File Number 4399.5 75A, 30V, 0.0075 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075 innovative UltraFET process. This advanced process technology Temperature Compensating
8.8. Size:367K intersil
huf76107p3.pdf 
HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power 20A, 30V MOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052 the innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model a
8.9. Size:134K intersil
huf76121sk8.pdf 
HUF76121SK8 Data Sheet April 1999 File Number 4737 8A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 8A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models
8.10. Size:219K intersil
huf76113dk8.pdf 
HUF76113DK8 TM Data Sheet June 2000 File Number 4387.5 6A, 30V, 0.032 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.032 UltraFET process. This advanced process technology achieves the Temperature Compensating PS
8.11. Size:118K intersil
huf76137p3.pdf 
HUF76137P3, HUF76137S3S Data Sheet September 1999 File Number 4398.6 75A, 30V, 0.009 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.009 innovative UltraFET process. This advanced process technology Temperature Compensating PS
8.12. Size:134K intersil
huf76105sk8.pdf 
HUF76105SK8 Data Sheet May 1999 File Number 4719.1 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Simulation Models lowest possible
8.14. Size:116K intersil
huf76129d3-s.pdf 
HUF76129D3, HUF76129D3S Data Sheet September 1999 File Number 4394.5 20A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS
8.15. Size:114K intersil
huf76121p3-s3s.pdf 
HUF76121P3, HUF76121S3S Data Sheet September 1999 File Number 4392.8 47A, 30V, 0.021 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 47A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021 innovative UltraFET process. This advanced process technology Temperature Compensating PS
8.16. Size:184K intersil
huf76113t3st.pdf 
HUF76113T3ST TM Data Sheet June 2000 File Number 4388.3 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 4.7A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.031 UltraFET process. This advanced process technology achieves the Temperature Compensating PS
8.17. Size:174K intersil
huf76105dk8.pdf 
HUF76105DK8 TM Data Sheet June 2000 File Number 4380.6 5A, 30V, 0.050 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Temperature Compensating
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