All MOSFET. HUF76429S3ST Datasheet

 

HUF76429S3ST Datasheet and Replacement


   Type Designator: HUF76429S3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 203 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-263AB
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HUF76429S3ST Datasheet (PDF)

 ..1. Size:206K  fairchild semi
 huf76429s3st.pdf pdf_icon

HUF76429S3ST

HUF76429P3, HUF76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

 3.1. Size:207K  fairchild semi
 huf76429s3s.pdf pdf_icon

HUF76429S3ST

HUF76429P3, HUF76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

 6.1. Size:346K  fairchild semi
 huf76429d f085.pdf pdf_icon

HUF76429S3ST

HUFA76429D3ST_F085 Data Sheet September 201020A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Im

 6.2. Size:285K  fairchild semi
 huf76429d3st.pdf pdf_icon

HUF76429S3ST

HUF76429D3, HUF76429D3SData Sheet February 200520A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

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Keywords - HUF76429S3ST MOSFET datasheet

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