All MOSFET. HUFA75307D3S Datasheet

 

HUFA75307D3S MOSFET. Datasheet pdf. Equivalent

Type Designator: HUFA75307D3S

SMD Transistor Code: 75307D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 16 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm

Package: TO-252AA

HUFA75307D3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUFA75307D3S Datasheet (PDF)

1.1. hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf Size:215K _update_mosfet

HUFA75307D3S
HUFA75307D3S

HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs • 15A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

1.2. hufa75307t3st.pdf Size:174K _fairchild_semi

HUFA75307D3S
HUFA75307D3S

HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090? manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowe

 2.1. hufa75309t3st.pdf Size:171K _update_mosfet

HUFA75307D3S
HUFA75307D3S

HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET • 3A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.070Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE®

2.2. hufa75309d3 hufa75309d3s hufa75309p3.pdf Size:215K _update_mosfet

HUFA75307D3S
HUFA75307D3S

HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs • 19A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

Datasheet: HUF76437S3ST , HUF76439S3ST , HUF76445S3ST , HUF76609D3ST , HUF76619D3ST , HUF76629D3ST , HUF76633S3ST , HUFA75307D3 , IRFZ44A , HUFA75307D3ST , HUFA75307P3 , HUFA75309D3 , HUFA75309D3S , HUFA75309P3 , HUFA75309T3ST , HUFA75321D3 , HUFA75321D3ST .

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