HUFA75639G3 MOSFET. Datasheet pdf. Equivalent

Type Designator: HUFA75639G3

Marking Code: 75639G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 56 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 110 nC

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO-247

HUFA75639G3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUFA75639G3 Datasheet (PDF)

1.1. hufa75639g3 hufa75639p3 hufa75639s3st.pdf Size:221K _update_mosfet

HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Electrical Models advanced process technology - Spice and Saber Thermal Imp

1.2. hufa75639g3 hufa75639p3 hufa75639s3st.pdf Size:221K _fairchild_semi