All MOSFET. HUFA75652G3 Datasheet

 

HUFA75652G3 Datasheet and Replacement


   Type Designator: HUFA75652G3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 515 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 195 nS
   Cossⓘ - Output Capacitance: 2345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-247
 

 HUFA75652G3 substitution

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HUFA75652G3 Datasheet (PDF)

 ..1. Size:195K  fairchild semi
 hufa75652g3.pdf pdf_icon

HUFA75652G3

HUFA75652G3Data Sheet December 200175A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCEDRAIN Ultra Low On-ResistanceGATE- rDS(ON) = 0.008, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comDRAINHUFA75652G3

 7.1. Size:200K  fairchild semi
 hufa75637p3 hufa75637s3s hufa75637s3st.pdf pdf_icon

HUFA75652G3

HUFA75637P3, HUFA75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice a

 7.2. Size:196K  fairchild semi
 hufa75617d3s hufa75617d3st.pdf pdf_icon

HUFA75652G3

HUFA75617D3, HUFA75617D3SData Sheet December 200116A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceSOURCEDRAINDRAIN- rDS(ON) = 0.090, VGS = 10VGATE (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsDRAIN SOURCE- Spice and SABER

 7.3. Size:352K  fairchild semi
 hufa75645s3s.pdf pdf_icon

HUFA75652G3

HUFA75645S3SData Sheet December 2001N-Channel UltraFET Power MOSFET100 V, 75 A, 14 mPackaging Features Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABERElectrical ModelsGATE- Spice and Saber Thermal Impedance ModelsSOURCE- www.fairchild.com Peak Current

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Datasheet: HUFA75623S3ST , HUFA75637P3 , HUFA75637S3S , HUFA75637S3ST , HUFA75639G3 , HUFA75639P3 , HUFA75639S3ST , HUFA75645P3 , AON6414A , HUFA75823D3S , HUFA75823D3ST , HUFA75829D3S , HUFA75829D3ST , HUFA75842P3 , HUFA75842S3S , HUFA75842S3ST , HUFA75852G3 .

History: 2SK2150 | STD12N05 | 2N6756JTXV

Keywords - HUFA75652G3 MOSFET datasheet

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