HUFA75652G3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HUFA75652G3
Маркировка: 75652G
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 515 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 393 nC
Время нарастания (tr): 195 ns
Выходная емкость (Cd): 2345 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO-247
Аналог (замена) для HUFA75652G3
HUFA75652G3 Datasheet (PDF)
hufa75652g3.pdf
HUFA75652G3Data Sheet December 200175A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCEDRAIN Ultra Low On-ResistanceGATE- rDS(ON) = 0.008, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comDRAINHUFA75652G3
hufa75637p3 hufa75637s3s hufa75637s3st.pdf
HUFA75637P3, HUFA75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice a
hufa75617d3s hufa75617d3st.pdf
HUFA75617D3, HUFA75617D3SData Sheet December 200116A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceSOURCEDRAINDRAIN- rDS(ON) = 0.090, VGS = 10VGATE (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsDRAIN SOURCE- Spice and SABER
hufa75645s3s.pdf
HUFA75645S3SData Sheet December 2001N-Channel UltraFET Power MOSFET100 V, 75 A, 14 mPackaging Features Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABERElectrical ModelsGATE- Spice and Saber Thermal Impedance ModelsSOURCE- www.fairchild.com Peak Current
hufa75623s3st.pdf
HUFA75623P3, HUFA75623S3STData Sheet December 200122A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.064, VGS = 10VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElectrical ModelsDRAIN- Spice and SABER
hufa75639g3 hufa75639p3 hufa75639s3s.pdf
HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp
hufa75645p3.pdf
HUFA75645P3, HUFA75645S3SData Sheet December 200175A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.014, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and Saber
hufa75639g3 hufa75639p3 hufa75639s3st.pdf
HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp
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