All MOSFET. HUFA76423S3ST Datasheet

 

HUFA76423S3ST Datasheet and Replacement


   Type Designator: HUFA76423S3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-263AB
 
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HUFA76423S3ST Datasheet (PDF)

 ..1. Size:240K  fairchild semi
 hufa76423p3 hufa76423s3s hufa76423s3st.pdf pdf_icon

HUFA76423S3ST

HUFA76423P3, HUFA76423S3SData Sheet December 200133A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE)- rDS(ON) = 0.030, VGS = 10VGATE- rDS(ON) = 0.035, VGS = 5VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Ele

 5.1. Size:199K  fairchild semi
 hufa76423d3s hufa76423d3st.pdf pdf_icon

HUFA76423S3ST

HUFA76423D3, HUFA76423D3SData Sheet December 200120A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.032, VGS = 10VDRAIN DRAIN- rDS(ON) = 0.037, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

 6.1. Size:229K  fairchild semi
 hufa76429d3.pdf pdf_icon

HUFA76423S3ST

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 6.2. Size:206K  fairchild semi
 hufa76429p3 hufa76429s3s hufa76429s3st.pdf pdf_icon

HUFA76423S3ST

HUFA76429P3, HUFA76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEE

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History: SVGP15751PL3

Keywords - HUFA76423S3ST MOSFET datasheet

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