All MOSFET. WFD5N50 Datasheet

 

WFD5N50 Datasheet and Replacement


   Type Designator: WFD5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-252
 

 WFD5N50 substitution

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WFD5N50 Datasheet (PDF)

 ..1. Size:734K  winsemi
 wfd5n50.pdf pdf_icon

WFD5N50

WFD5N50WFD5N50WFD5N50WFD5N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 5A,500V,RDS(on)(Max1.6)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MO SFET is pro du ced using Wi

 9.1. Size:487K  winsemi
 wfd5n60b.pdf pdf_icon

WFD5N50

WFD5N60BWFD5N60BWFD5N60BWFD5N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.4)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 9.2. Size:485K  winsemi
 wfd5n60c.pdf pdf_icon

WFD5N50

WFD5N60CWFD5N60CWFD5N60CWFD5N60CSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 9.3. Size:255K  winsemi
 wfd5n65l.pdf pdf_icon

WFD5N50

WFD5N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD5.0A,650V,R (Max2.7)@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced

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Datasheet: HUFA76645S3ST , VTI634 , WFD1N60 , WFD20N06 , WFD2N60 , WFD2N60B , WFD4N60 , WFD4N60B , AON7403 , WFD5N60B , WFD5N60C , WFD830 , WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 .

Keywords - WFD5N50 MOSFET datasheet

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