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WFD5N50 Specs and Replacement


   Type Designator: WFD5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-252
 

 WFD5N50 substitution

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WFD5N50 Specs

 ..1. Size:734K  winsemi
 wfd5n50.pdf pdf_icon

WFD5N50

WFD5N50 WFD5N50 WFD5N50 WFD5N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 5A,500V,RDS(on)(Max1.6 )@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MO SFET is pro du ced using Wi... See More ⇒

 9.1. Size:487K  winsemi
 wfd5n60b.pdf pdf_icon

WFD5N50

WFD5N60B WFD5N60B WFD5N60B WFD5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒

 9.2. Size:485K  winsemi
 wfd5n60c.pdf pdf_icon

WFD5N50

WFD5N60C WFD5N60C WFD5N60C WFD5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒

 9.3. Size:255K  winsemi
 wfd5n65l.pdf pdf_icon

WFD5N50

WFD5N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 5.0A,650V,R (Max2.7 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced ... See More ⇒

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Detailed specifications: HUFA76645S3ST , VTI634 , WFD1N60 , WFD20N06 , WFD2N60 , WFD2N60B , WFD4N60 , WFD4N60B , IRF9640 , WFD5N60B , WFD5N60C , WFD830 , WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 .

History: WFF10N60

Keywords - WFD5N50 MOSFET specs

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