WFD830 Datasheet. Specs and Replacement

Type Designator: WFD830  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-252

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WFD830 datasheet

 ..1. Size:583K  winsemi
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WFD830

WFD830 WFD830 WFD830 WFD830 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,500V,R Max 1.5 )@V =10V DS(on)( GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using W... See More ⇒

 0.1. Size:424K  winsemi
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WFD830

WFD830B WFD830B WFD830B WFD830B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 5A,500V, R (Max1.6 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usin... See More ⇒

Detailed specifications: WFD20N06, WFD2N60, WFD2N60B, WFD4N60, WFD4N60B, WFD5N50, WFD5N60B, WFD5N60C, SI2302, WFD830B, WFF10N60, WFF10N65, WFF12N60, WFF12N65, WFF12N70S, WFF13N50, WFF15N60

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