All MOSFET. WFD830 Equivalents Search

 

WFD830 Specs and Replacement


   Type Designator: WFD830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-252
 

 WFD830 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WFD830 Specs

 ..1. Size:583K  winsemi
 wfd830.pdf pdf_icon

WFD830

WFD830 WFD830 WFD830 WFD830 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,500V,R Max 1.5 )@V =10V DS(on)( GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using W... See More ⇒

 0.1. Size:424K  winsemi
 wfd830b.pdf pdf_icon

WFD830

WFD830B WFD830B WFD830B WFD830B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 5A,500V, R (Max1.6 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usin... See More ⇒

Detailed specifications: WFD20N06 , WFD2N60 , WFD2N60B , WFD4N60 , WFD4N60B , WFD5N50 , WFD5N60B , WFD5N60C , K2611 , WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 .

History: SVF10N60K | WFF10N65

Keywords - WFD830 MOSFET specs

 WFD830 cross reference
 WFD830 equivalent finder
 WFD830 lookup
 WFD830 substitution
 WFD830 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.