All MOSFET. WFD830B Datasheet

 

WFD830B Datasheet and Replacement


   Type Designator: WFD830B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-252
 

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WFD830B Datasheet (PDF)

 ..1. Size:424K  winsemi
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WFD830B

WFD830BWFD830BWFD830BWFD830BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 5A,500V, R (Max1.6)@V =10VDS(on) GS Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usin

 8.1. Size:583K  winsemi
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WFD830B

WFD830WFD830WFD830WFD830Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,500V,R Max 1.5)@V =10VDS(on)( GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using W

Datasheet: WFD2N60 , WFD2N60B , WFD4N60 , WFD4N60B , WFD5N50 , WFD5N60B , WFD5N60C , WFD830 , 2SK3918 , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , WFF18N50 .

History: BSC094N03SG | MPSU65M390 | 2SK3472 | STD5NK60ZT4 | LSGC03R020 | IXFH18N90P | AP4435GH

Keywords - WFD830B MOSFET datasheet

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