All MOSFET. WFF20N60 Datasheet

 

WFF20N60 Datasheet and Replacement


   Type Designator: WFF20N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TO-220F
 

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WFF20N60 Datasheet (PDF)

 ..1. Size:271K  winsemi
 wff20n60.pdf pdf_icon

WFF20N60

WFF20N60WFF20N60WFF20N60WFF20N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 20A,600V,R (Max0.39)@V =10VDS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 0.1. Size:535K  winsemi
 wff20n60s.pdf pdf_icon

WFF20N60

WFF20N60SWFF20N60SWFF20N60SWFF20N60SSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures Ultra low Rdson Ultra-low Gate charge(Typical 68nC) 100% UIS Tested RoHS compliantGeneral DescriptionWinsemi Power MOSFET is fabricated using advanced superjunction technology.The resulting device has extremely low

Datasheet: WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , WFF18N50 , IRFZ44N , WFF20N60S , WFF2N60 , WFF2N60B , PJA138K , PJA3400 , PJA3401 , PJA3402 , PJA3404 .

History: IRF540ZLPBF

Keywords - WFF20N60 MOSFET datasheet

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