PJA3412 Specs and Replacement
Type Designator: PJA3412
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: SOT-23
PJA3412 substitution
- MOSFET ⓘ Cross-Reference Search
PJA3412 datasheet
pja3412.pdf
PPJA3412 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) 20 V 4.1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@4.1A... See More ⇒
pja3413.pdf
PPJA3413 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) Voltage -20 V Current -3.4A Features RDS(ON) , VGS@-4.5V, ID@-3.4A... See More ⇒
pja3414.pdf
PPJA3414 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) 20 V 5.2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@5.2A... See More ⇒
pja3415ae.pdf
PPJA3415AE 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit inch(mm) Voltage -20 V Current -4.3A Features RDS(ON) , VGS@-4.5V, ID@-4.3A... See More ⇒
Detailed specifications: PJA3401, PJA3402, PJA3404, PJA3405, PJA3406, PJA3407, PJA3409, PJA3411, IRF640N, PJA3413, PJA3414, PJA3415, PJA3416, PJA3430, PJA3431, PJA3432, PJA3433
Keywords - PJA3412 MOSFET specs
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