PJA3432 Specs and Replacement
Type Designator: PJA3432
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT-23
PJA3432 substitution
- MOSFET ⓘ Cross-Reference Search
PJA3432 datasheet
pja3432.pdf
PPJA3432 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit inch(mm) 30 V 1.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@1.6A... See More ⇒
pja3430.pdf
PPJA3430 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit inch(mm) 20 V 2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@2.0A... See More ⇒
pja3434.pdf
PPJA3434 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) 20 V 750mA Voltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive.. Green molding compound as per IEC61249 Std. (Halo... See More ⇒
pja3431.pdf
PPJA3431 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit inch(mm) Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A... See More ⇒
Detailed specifications: PJA3411, PJA3412, PJA3413, PJA3414, PJA3415, PJA3416, PJA3430, PJA3431, IRFB4115, PJA3433, PJA3434, PJA45N02, PJA55P03, PJA63P02, PJA65P03, PJA87P03, PJA94N03
Keywords - PJA3432 MOSFET specs
PJA3432 cross reference
PJA3432 equivalent finder
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PJA3432 substitution
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