PJA3433 Datasheet and Replacement
Type Designator: PJA3433
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: SOT-23
PJA3433 substitution
PJA3433 Datasheet (PDF)
pja3433.pdf

PPJA3433 30V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)Voltage -30 V Current -1.1A Features RDS(ON) , VGS@-4.5V, ID@-1.1A
pja3430.pdf

PPJA3430 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)20 V 2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@2.0A
pja3434.pdf

PPJA3434 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 750mAVoltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive.. Green molding compound as per IEC61249 Std. (Halo
pja3431.pdf

PPJA3431 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A
Datasheet: PJA3412 , PJA3413 , PJA3414 , PJA3415 , PJA3416 , PJA3430 , PJA3431 , PJA3432 , IRFP250N , PJA3434 , PJA45N02 , PJA55P03 , PJA63P02 , PJA65P03 , PJA87P03 , PJA94N03 , PJC138K .
History: AP85T10GP-HF | APT12067JFLL | SPA02N80C3 | PJA3416 | PJA3432 | PJA3411 | PJA3431
Keywords - PJA3433 MOSFET datasheet
PJA3433 cross reference
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History: AP85T10GP-HF | APT12067JFLL | SPA02N80C3 | PJA3416 | PJA3432 | PJA3411 | PJA3431



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