PJE8402 MOSFET Datasheet: N-Ch, 20V, 0.7A. Full specification with pinout and replacement list

PJE8402 Specs and Replacement

Type Designator: PJE8402

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-523

PJE8402 substitution

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PJE8402 datasheet

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PPJE8402 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A... See More ⇒

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PPJE8404 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A... See More ⇒

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PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 20 V 800mA Voltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2 (typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f... See More ⇒

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