All MOSFET. PJE8403 Datasheet

 

PJE8403 Datasheet and Replacement


   Type Designator: PJE8403
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: SOT-523
 

 PJE8403 substitution

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PJE8403 Datasheet (PDF)

 ..1. Size:237K  panjit
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PJE8403

PPJE8403 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)Voltage -20 V Current -0.6A Features RDS(ON) , VGS@-4.5V, ID@-0.6A

 8.1. Size:206K  panjit
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PJE8403

PPJE8404 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A

 8.2. Size:242K  panjit
 pje8402.pdf pdf_icon

PJE8403

PPJE8402 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A

 8.3. Size:262K  panjit
 pje8406.pdf pdf_icon

PJE8403

PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 800mAVoltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2(typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f

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Datasheet: PJC7403 , PJC7404 , PJC7406 , PJC7407 , PJE138K , PJE8400 , PJE8401 , PJE8402 , SKD502T , PJE8404 , PJE8405 , PJE8406 , PJL9801 , PJQ2888 , PJS50N03 , PJS6400 , PJS6401 .

History: HFD5N60S | SPC4516 | SPB80N03S2 | MMP60R580PTH | AP9430AGYT-HF

Keywords - PJE8403 MOSFET datasheet

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