PJE8405 MOSFET PDF: P-Ch, 30V, 0.5A. Datasheet. Full specification with pinout and replacement list

PJE8405 Specs and Replacement

   Type Designator: PJE8405
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: SOT-523

PJE8405 substitution

- MOSFET ⓘ Cross-Reference Search

PJE8405 datasheet

..1. Size:233K panjit
pje8405.pdf pdf_icon

... See More ⇒

8.1. Size:206K panjit
pje8404.pdf pdf_icon

PPJE8404 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A... See More ⇒

8.2. Size:242K panjit
pje8402.pdf pdf_icon

PPJE8402 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A... See More ⇒

8.3. Size:262K panjit
pje8406.pdf pdf_icon

PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 20 V 800mA Voltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2 (typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f... See More ⇒