PJE8405 Datasheet and Replacement
Type Designator: PJE8405
Marking Code: E05
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 1.6 nC
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
Package: SOT-523
PJE8405 substitution
PJE8405 Datasheet (PDF)
pje8405.pdf

PPJE8405 30V P-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)Voltage -30 V Current -0.5A Features RDS(ON) , VGS@-4.5V, ID@-0.5A
pje8404.pdf

PPJE8404 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A
pje8402.pdf

PPJE8402 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A
pje8406.pdf

PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 800mAVoltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2(typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BRCS2305MC | HGK105N15M
Keywords - PJE8405 MOSFET datasheet
PJE8405 cross reference
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History: BRCS2305MC | HGK105N15M



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