All MOSFET. PJS6416 Datasheet

 

PJS6416 Datasheet and Replacement


   Type Designator: PJS6416
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT-23-6L
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PJS6416 Datasheet (PDF)

 ..1. Size:286K  panjit
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PJS6416

PPJS6416 20V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) 20 V 7.4A Voltage Current Features RDS(ON) , VGS@4.5V, ID@7.4A

 8.1. Size:258K  panjit
 pjs6413.pdf pdf_icon

PJS6416

PPJS6413 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -20 V Current -4.4A Features RDS(ON) , VGS@-4.5V, ID@-4.4A

 8.2. Size:285K  panjit
 pjs6415.pdf pdf_icon

PJS6416

PPJS6415 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -20 V Current -5.2A Features RDS(ON) , VGS@-4.5V, ID@-5.2A

 8.3. Size:291K  panjit
 pjs6417.pdf pdf_icon

PJS6416

PPJS6417 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit: inch(mm) Voltage -20 V Current -6.5A Features RDS(ON) , VGS@-4.5V, ID@-6.5A

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Keywords - PJS6416 MOSFET datasheet

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